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 TCST1230
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output
Description
The TCST1230 is a transmissive sensor that includes an infrared emitter and phototransistor, located faceto-face on the optical axes in a leaded package which blocks visible light.
Top view
A E
C
C
Features
19205
* Package type: Leaded * Detector type: Phototransistor * Dimensions: e2 L 9.2 mm x W 4.8 mm x H 5.4 mm * Gap: 2.8 mm * Aperture: 0.5 mm * Typical output current under test: IC = 2 mA * Daylight blocking filter * Emitter wavelength: 950 nm * Lead (Pb)-free soldering released * Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC * Minimum order quantity: 4800 pcs, 60 pcs/tube
Applications
* * * * Optical switch Shaft encoder Detection of opaque material such as paper Detection of magnetic tapes
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Coupler
Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Distance to package 1.6 mm, t5s Test condition Tamb 25 C Symbol Ptot Tamb Tstg Tsd Value 250 - 25 to + 85 - 40 to + 100 260 Unit mW C C C
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 A Tamb 25 C Test condition Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V mA A mW C
Document Number 83765 Rev. 1.7, 06-Nov-06
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TCST1230
Vishay Semiconductors Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Tamb 25 C Test condition Symbol VCEO VECO IC PV Tj Value 70 7 100 150 100 Unit V V mA mW C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Coupler
Parameter Collector current Collector emitter saturation voltage Test condition VCE = 10 V, IF = 20 mA IF = 20 mA, IC = 0.2 mA Symbol IC VCEsat Min 0.5 Typ. Max 14 0.4 Unit mA V
Input (Emitter)
Parameter Forward voltage Junction capacitance Test condition IF = 60 mA VR = 0, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.5 Unit V pF
Output (Detector)
Parameter Collector emittter voltage Emitter collector voltage Collector dark current Test condition IC = 1 mA IE = 10 A VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 10 100 Typ. Max Unit V V nA
Switching Characteristics
Parameter Turn-on time Turn-off time Test condition IC = 1 mA, VCE = 5 V, RL = 100 (see figure 1) IC = 1 mA, VCE = 5 V, RL = 100 (see figure 1) Symbol ton toff Min Typ. 15.0 10.0 Max Unit s s
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Document Number 83765 Rev. 1.7, 06-Nov-06
TCST1230
Vishay Semiconductors
0
IF
IF
+5V IC = 1 mA; adjusted by I F
P - Power Dissipation (mW)
400
RG = 50 tp = 0.01 T t p = 50 s Channel I Channel II
50
20223
300 Coupled device 200 Phototransistor 100 IR - diode
Oscilloscope R L 1 M CL 20 pF
100
0 0
95 11088
30
60
90
120
150
Tamb - Ambient Temperature (C)
Figure 1. Test Circuit for ton and toff
Figure 3. Power Dissipation Limit vs. Ambient Temperature
IF 0 IC 100 % 90 % tp
96 11698
t
10 % 0
tr td ton
pulse duration delay time rise time turn-on time
ts
tf toff
t
storage time fall time turn-off time
tp td tr ton (=td+ t r )
ts tf toff (= ts + tf)
Figure 2. Switching Times
Typical Characteristics
Tamb = 25 C, unless otherwise specified
CTR rel - Relative Current Transfer Ratio
1000
2.0 VCE = 5 V I F = 20 mA 1.5
I F - Forward Current (mA)
100
10
1.0
1
0.5
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
0 - 25
0
25
50
75
100
V F - Forward Voltage (V)
95 11089
Tamb - Ambient Temperature (C)
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature
Document Number 83765 Rev. 1.7, 06-Nov-06
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TCST1230
Vishay Semiconductors
10000 ICEO - Collector Dark Current (nA) CTR - Current Transfer Ratio (%) VCE = 25 V IF = 0
100 VCE = 5 V
1000
10
100
1
10
1 0
95 11090
0.1 25 50 75 Tamb - Ambient Temperature (C) 100 0.1
95 11085
0
10
100
I F - Forward Current (mA)
Figure 6. Collector Dark Current vs. Ambient Temperature
Figure 9. Current Transfer Ratio vs. Forward Current
10
20 ton / t off - Turn on/Turn off Time (s)
VCE = 10 V
I C - Collector Current (mA)
1
15
Non saturated operation VS = 5 V R L = 100
0.1
10 t on 5 t off 0 0 2 4 6 8 10 I C - Collector Current (mA)
0.01
0.001 0.1
95 11083
1
10
100
I F - Forward Current (mA)
95 11086
Figure 7. Collector Current vs. Forward Current
Figure 10. Turn on/off Time vs. Collector Current
10
I Crel - Relative Collector Current
110 100 90 80 70 60 50 40 30 20 10 0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0
96 12006
0
I C - Collector Current (mA)
A = 0.5 mm
I F = 50 mA 1 20 mA
s
10 mA 0.1 5 mA 2 mA 0.01 0.1 1 10 100
0.1 0.2 0.3 0.4 0.5
95 11084
VCE - Collector Emitter Voltage (V)
s - Displacement (mm)
Figure 8. Collector Current vs. Collector Emitter Voltage
Figure 11. Relative Collector Current vs. Displacement
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Document Number 83765 Rev. 1.7, 06-Nov-06
TCST1230
Vishay Semiconductors Package Dimensions in mm
96 12083
Tube Dimensions
20256
Document Number 83765 Rev. 1.7, 06-Nov-06
www.vishay.com 5
TCST1230
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83765 Rev. 1.7, 06-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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